"Integrated Photo-coupled Semiconductor Crosspoint Switches" : B-5: LASERS (2)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-01
著者
-
Mimura Akio
Hitachi Research Laboratory Hitachi Ltd.
-
Sugawara Yoshitaka
Hitachi Research Laboratory Hitachi Ltd.
-
Sugawara Yoshitaka
Hitachi Research Laboratory
-
KAMEI Tatsuya
Hitachi Research Laboratory, Hitachi Ltd.
-
OGAWA Takuzo
Hitachi Research Laboratory, Hitachi Ltd.
-
Kamei Tatsuya
Hitachi Research Laboratory
-
Ogawa Takuzo
Hitachi Research Laboratory Hitachi Ltd.
関連論文
- A Light Activated High Power Bidirectional Thyristor : B-5: SENSING DEVICES
- The Retardation of Gallium Diffusion in Silicon
- "Integrated Photo-coupled Semiconductor Crosspoint Switches" : B-5: LASERS (2)
- Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
- Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
- The Dielectrically Isolated High Voltage IC Technology : A-3: LSI-2
- Elimination of Stacking Fault in Si Epitaxial Layer by Heat Treatment
- On Determination of Gold Trap Concentration in Diffused Silicon pn Junctions
- Influence of Metal Impurities on Breakdown Characteristics of High Voltage Silicon n^+p Junctions
- Flat and Large Poly-Si Grains by a Continuous Process of Plasma-Enhanced Chemical Vapor Deposition of a-Si and Its Direct Laser Crystallization
- Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing