Influence of Metal Impurities on Breakdown Characteristics of High Voltage Silicon n^+p Junctions

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概要

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• The effect of gold or copper diffusion on the breakdown and multiplication characteristics of high voltage n^+p junctions are studied. In the case of gold, the charcteristics become softer for higher diffusion temperature, higher cooling rate and larger deposited gold quantity, whereas soft characteristics do not appear in the case of copper except in very rapidly cooled samples. Results of the multiplication characteristics measurement show the presence of microplasma. A big microplasma is sometimes observed independently of diffusion treatment, especially in copper diffused junctions. A few copper precipitates which may contribute to the microplasma formation are observed in the samples by use of an infrared microscope. There is an indication that copper atoms migrate from the inside to the surfaces during the cooling period. Gold precipitate, however, is not found.

• 1966-02-15

著者

• Ogawa Takuzo

  Hitachi Research Laboratory Hitachi Ltd.

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• Elimination of Stacking Fault in Si Epitaxial Layer by Heat Treatment
• On Determination of Gold Trap Concentration in Diffused Silicon pn Junctions
• Influence of Metal Impurities on Breakdown Characteristics of High Voltage Silicon n^+p Junctions

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