The Retardation of Gallium Diffusion in Silicon

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1965-10-15

著者

• Okamura Masahiro

  Hitachi Research Laboratory Hitachi Ltd.

• OGAWA Takuzo

  Hitachi Research Laboratory, Hitachi Ltd.

• Ogawa Takuzo

  Hitachi Research Laboratory Hitachi Ltd.

関連論文

• The Retarded Diffusion of Gallium in Silicon. I
• Boron Diffusion into Silicon Using Elemental Boron
• A Light Activated High Power Bidirectional Thyristor : B-5: SENSING DEVICES
• The Retarded Diffusion of Gallium in Silicon. II
• Gallium Diffusion in Silicon
• The Retardation of Gallium Diffusion in Silicon
• The Orientation Dependence of Boron Diffusion
• "Integrated Photo-coupled Semiconductor Crosspoint Switches" : B-5: LASERS (2)
• Elimination of Stacking Fault in Si Epitaxial Layer by Heat Treatment
• On Determination of Gold Trap Concentration in Diffused Silicon pn Junctions
• Influence of Metal Impurities on Breakdown Characteristics of High Voltage Silicon n^+p Junctions

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