A Light Activated High Power Bidirectional Thyristor : B-5: SENSING DEVICES

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The Retarded Diffusion of Gallium in Silicon. I
Boron Diffusion into Silicon Using Elemental Boron
A Light Activated High Power Bidirectional Thyristor : B-5: SENSING DEVICES
The Retarded Diffusion of Gallium in Silicon. II
Gallium Diffusion in Silicon
The Retardation of Gallium Diffusion in Silicon
The Orientation Dependence of Boron Diffusion
A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process (Special Issue on Liquid-Crystal Displays)
"Integrated Photo-coupled Semiconductor Crosspoint Switches" : B-5: LASERS (2)
Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
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Effects of Line Resistance and Parasitic Capacitance on Transmittance Distribution in TFT-LCDs
Effect of Channel Implantation on the Device Performance of Low Temperature Processed Polycrystalline Silicon Thin Film Transistors
On Determination of Gold Trap Concentration in Diffused Silicon pn Junctions
Interaction of Hydrogenated Silicon Nitride Films with Indium Tin Oxide
Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing
TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
Friction and Elongation of Al Electrodes due to Micro-Sliding between the Inner Mo Electrode and the Al Electrodes in High-Power Devices
250V 1A Three-Phase Monolithic Inverter IC for Brushless Motor Drives

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