Interaction of Hydrogenated Silicon Nitride Films with Indium Tin Oxide
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概要
- 論文の詳細を見る
The whitening mechanism of hydrogenated silicon nitride (SinN_x:H) film deposited on indium tin oxide (ITO) film was investigated by means of optical emission spectroscopy (OES), scanning electron microscopy (SEM) and X-ray photoelectron spectrosscopy (XPS) analysis. The degree of whitening of the SiN_x:H film on ITO depends on the deposition conditions of SinN_x:H, i.e., the SiH_4 flow rate and the substrate temperature. Reactive species such as SiH_n, decomposed from SiH_4 gas, preferentially caused the reduction of ITO. This was followed by formation of In metal and a Si-rich porous layer containing SiO_2. An abnormal growth of SinN_x:H films caused by these successive reactions led to the whitening.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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Kimura Etsuko
Hitachi Research Laboratory Hitachi Ltd.
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KAWACHI Genshiro
Hitachi Research Laboratory, Hitachi Ltd.
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Konishi N
Tohoku Univ. Sendai Jpn
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Konishi Nobutake
Hitachi Research Laboratory Hitachi Ltd.
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MATSUKAWA Yuka
Mobara Works, Hitachi, Ltd.
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SASANO Akira
Musashino Office, Hitachi Device Engineering Co. Ltd.
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Kawachi G
Hitachi Ltd. Ibaraki Jpn
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Kawachi Genshiro
Hitachi Research Laboratory Hitachi Ltd.
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Sasano A
Musashino Office Hitachi Device Engineering Co. Ltd.
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Matsukawa Yuka
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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KONISHI Nobutake
Hitachi Research Laboratory
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