Defects in Si Thin-Film Transistors Studied by Spin-Dependent Transport
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Stutzmann Martin
Walter Schottky Institut
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Kawachi Genshiro
Hitachi Research Laboratory Hitachi Ltd.
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GRAEFF Carlos
Walter Schottky Institut, Technische Universitat Munchen
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BRANDT Martin
Walter Schottky Institut, Technische Universitat Munchen
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Brandt Martin
Walter Schottky Institut Technische Universitat Munchen
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Graeff Carlos
Walter Schottky Institut Technische Universitat Munchen
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- Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
- Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy
- Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
- Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
- Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
- Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
- Thin Film Solar Cells Prepared on Low Thermal Budget Polycrystalline Silicon Seed Layers
- Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon
- Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
- Interaction of Hydrogenated Silicon Nitride Films with Indium Tin Oxide
- Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures
- Defects in Si Thin-Film Transistors Studied by Spin-Dependent Transport
- Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapour Deposition for Thin Film Solar Cell Applications : Semicondustors
- Capacitively-Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Solar Cells
- Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN
- Saturation Measurements of Electrically Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Based Thin-Film Transistors
- Polycrystalline Silicon Thin Films Produced by Interference Laser Crystallization of Amorphous Silicon