Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
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概要
- 論文の詳細を見る
- 1999-03-01
著者
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Ambacher Oliver
Walter Schottky Institut Technische Universitat Munchen
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Stutzmann Martin
Walter Schottky Institut
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Gorgens Lutz
Walter Schottky Institut Technische Universitat Munchen
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STUTZMANN Martin
Walter Schottky Institut, Technische Universitat Munchen
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KELLY Michael
Walter Schottky Institut, Technische Universitat Munchen
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GORGENS Lutz
Walter Schottky Institut, Technische Universitat Munchen
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AMBACHER Oliver
Walter Schottky Institut, Technische Universitat Munchen
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VAUDO Robert
Advanced Technology Materials, Inc.
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Phanse Vivek
Advanced Technology Materials, Inc.
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- Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
- Direct Observation of Mn Clusters in GaN by X-ray Scanning Microscopy
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- Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN
- Saturation Measurements of Electrically Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Based Thin-Film Transistors
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