Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-15
著者
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Stutzmann M
Technische Univ. Muenchen Garching Deu
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Ambacher O
Technische Univ. Ilmenau Ilmenau Deu
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Dimitrov R.
Walter Schottky Institute, TU-Munich, Am Coulombwall
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Ambacher O.
Walter Schottky Institute, TU-Munich, Am Coulombwall
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Stutzmann M.
Walter Schottky Institute, TU-Munich, Am Coulombwall
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BRUNNER D.
Walter Schottky Institut, TU-Miinchen, Am Coulombwall
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SOHMER A.
Physikalisches Institut, Universitat Stuttgart
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SCHOLZ F.
Physikalisches Institut, Universitat Stuttgart
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Sohmer A.
Physikalisches Institut Universitat Stuttgart
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Ambacher Oliver
Walter Schottky Institut Technische Universitat Munchen
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Dimitrov R
Walter Schottky Institute Tu-munich Am Coulombwall
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Stutzmann M.
Walter Schottky Institute Tu-munich Am Coulombwall
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Scholz F.
Physikalisches Institut Universitat Stuttgart
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Brunner D.
Walter Schottky Institut Tu-miinchen Am Coulombwall
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- Nitrogen Effusion and Self-Diffusion in Ga^N/Ga^N Isotope Heterostructures
- Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy
- Quantitative Transmission Electrorn Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3(0001)
- Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
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