Quantitative Transmission Electrorn Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3(0001)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Stutzmann M
Technische Univ. Muenchen Garching Deu
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Ambacher O
Technische Univ. Ilmenau Ilmenau Deu
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Gebhardt Wolfgang
Institute Fur Festkorperphysik Universitat Regensburg
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AMBACHER Oliver
Walter Schottky Institut, TU-Munchen, Am Coulombwall
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ANGERER Helmut
Walter Schottky Institut, TU-Munchen, Am Coulombwall
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STUTZMANN Martin
Walter Schottky Institut, TU-Munchen, Am Coulombwall
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KAISER Stephan
Institute fur Festkorperphysik, Universitat Regensburg
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PREIS Herbert
Institute fur Festkorperphysik, Universitat Regensburg
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ROSENAUER Andreas
Labor fur Elektronenmikroskopie, Universitat Karlsruhe
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GERTHSEN Dagmar
Labor fur Elektronenmikroskopie, Universitat Karlsruhe
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Ambacher Oliver
Walter Schottky Institut Technische Universitat Munchen
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Stutzmann M.
Walter Schottky Institute Tu-munich Am Coulombwall
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Stutzmann Martin
Walter Schottky Institut
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Preis Herbert
Institute Fur Festkorperphysik Universitat Regensburg
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Kaiser Stephan
Institute Fur Festkorperphysik Universitat Regensburg
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Angerer Helmut
Walter Schottky Institut Tu-munchen Am Coulombwall
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Rosenauer Andreas
Labor Fur Elektronenmikroskopie Universitat Karlsruhe
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Gerthsen Dagmar
Labor Fur Elektronenmikroskopie Universitat Karlsruhe
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- Quantitative Transmission Electrorn Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3(0001)
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