Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapour Deposition for Thin Film Solar Cell Applications : Semicondustors
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概要
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The hot-wire deposition of μc-Si:H at low substrate and filament temperatures improves the material quality substantially. At a substrate temperature of 285℃ and a filament temperature of 1530℃ we prepared microcrystalline films with a spin density of N_S=1×10^<16> cm^<-3> measured by electron spin resonance (ESR) and an oxygen and carbon concentration of 2×10^<18> cm^<-3> at a deposition rate of 2.5 Å・s^<-1>. From infrared spectroscopy we calculated a hydrogen content of 5% in the best films. The spectra did not show absorption from SiO modes, which is typical for nonporous material. By incorporating this material into microcrystalline solar cells, we achieved an initial efficiency of 7%. By reducing the substrate temperature, an even higher efficiency of 7.5% was obtained.
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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Stutzmann Martin
Walter Schottky Institut
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Finger Friedhelm
Institut Fur Photovoltaik Forschungszentrum Julich
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KLEIN Stefan
Institut fur Photovoltaik, Forschungszentrum Julich
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WOLFF Johannes
Institut fur Photovoltaik, Forschungszentrum Julich
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CARIUS Reinhard
Institut fur Photovoltaik, Forschungszentrum Julich
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WANGER Heribert
Institut fur Photovoltaik, Forschungszentrum Julich
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Klein Stefan
Institut Fur Photovoltaik Forschungszentrum Julich
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Wanger Heribert
Institut Fur Photovoltaik Forschungszentrum Julich
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Carius Reinhard
Institut Fur Photovoltaik Forschungszentrum Julich
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Wolff Johannes
Institut Fur Photovoltaik Forschungszentrum Julich
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