Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-09-15
著者
-
Stutzmann M
Technische Univ. Muenchen Garching Deu
-
Rieger W.
Ferdinand Braun Institute Fur Hochstfrequenztechnik Rudower Chaussee
-
Ambacher O
Technische Univ. Ilmenau Ilmenau Deu
-
Dimitrov R.
Walter Schottky Institute, TU-Munich, Am Coulombwall
-
Mitchell A.
Walter Schottky Institute, TU-Munich, Am Coulombwall
-
Wittmer L.
Walter Schottky Institut, TU-Munich, Am Coulombwall
-
Ambacher O.
Walter Schottky Institute, TU-Munich, Am Coulombwall
-
Stutzmann M.
Walter Schottky Institute, TU-Munich, Am Coulombwall
-
Hilsenbeck J.
Ferdinand Braun Institute fur Hochstfrequenztechnik, Rudower Chaussee
-
Wittmer L.
Walter Schottky Institut Tu-munich Am Coulombwall
-
Dimitrov R
Walter Schottky Institute Tu-munich Am Coulombwall
-
Stutzmann M.
Walter Schottky Institute Tu-munich Am Coulombwall
-
Hilsenbeck J.
Ferdinand Braun Institute Fur Hochstfrequenztechnik Rudower Chaussee
-
Mitchell A.
Walter Schottky Institute Tu-munich Am Coulombwall
関連論文
- Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
- Nitrogen Effusion and Self-Diffusion in Ga^N/Ga^N Isotope Heterostructures
- Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy
- Quantitative Transmission Electrorn Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3(0001)
- Capacitively-Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Solar Cells