Stutzmann M | Technische Univ. Muenchen Garching Deu

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著作論文

Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
Nitrogen Effusion and Self-Diffusion in Ga^N/Ga^N Isotope Heterostructures
Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy
Quantitative Transmission Electrorn Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3(0001)
Capacitively-Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Solar Cells

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