Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN
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概要
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Bulk-like GaN with high structural and optical quality has been attained by hydride vapor-phase epitaxy (HVPE). The as-grown 330 μm-thick GaN layer was separated from the sapphire substrate by a laser-induced lift-off process. The full width at half maximum values of the X-ray diffraction (XRD) $\omega$-scans of the free-standing material are 96 and 129 arcsec for the (1 0 $-1$ 4) and (0 0 0 2) reflection, respectively, which rank among the smallest values published so far for free-standing HVPE-GaN. The dislocation density determined by plan-view TEM images is $1--2\times 10^{7}$ cm-2. Positron annihilation spectroscopy studies show that the concentration of Ga vacancy related defects is about $1.5\times 10^{16}$ cm-3. The high-resolution XRD, photoluminescence, $\mu$-Raman, and infrared spectroscopic ellipsometry measurements consistently prove that the free-standing material is of high crystalline quality and virtually strain-free. Therefore it is suitable to serve as a substrate for stress-free growth of high-quality III–nitrides based device heterostructures.
- 2004-04-15
著者
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PECZ Bela
Research Institute For Technical Physics and Material Science
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Monemar Bo
Department Of Physics And Measurement Technology Linkoping University
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Stutzmann Martin
Walter Schottky Institut
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Miskys Claudio
Walter Schottky Institut Technische Universitat Munchen
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Schubert Mathias
Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstr. 5, Leipzig 04103, Germany
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Gogova Daniela
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Larsson Henrik
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Kasic Alexander
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Yakimova Rositza
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Magnusson Björn
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Magnusson Björn
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden
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Tuomisto Filip
Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, HUT 02015, Finland
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Saarinen Kimmo
Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, HUT 02015, Finland
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Bundesmann Carsten
Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstr. 5, Leipzig 04103, Germany
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Bundesmann Carsten
Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstr. 5, Leipzig 04103, Germany
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Stutzmann Martin
Walter Schottky Institut, Technische Universität München, Am Coulombwall, Garching 85748, Germany
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Miskys Claudio
Walter Schottky Institut, Technische Universität München, Am Coulombwall, Garching 85748, Germany
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