Polycrystalline Silicon Thin Films Produced by Interference Laser Crystallization of Amorphous Silicon
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概要
- 論文の詳細を見る
Pulsed interference laser crystallization of amorphous silicon has been applied to produce polycrystalline silicon thin films with grain sizes exceeding 5 μm. It has been achieved by shifting the samples through the interference pattern, with steps of typical 100 nm width. Grain sizes have been investigated by atomic force microscopy (AFM). The grains show quadratic shapes with a typical length of the applied interference period (5 μm) and width around 1.5-2.5 μm.
- 社団法人応用物理学会の論文
- 1999-10-01
著者
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Nebel Christoph
Walter Schottky Institut
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Stutzmann Martin
Walter Schottky Institut
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REZEK Bohuslav
Walter Schottky Institut
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