Saturation Measurements of Electrically Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Based Thin-Film Transistors
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概要
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The saturational broadening of an electrically detected magnetic resonance signal in hydrogenated amorphous silicon has been observed in thin-film transistor structures. It was found that broadening of the resonance spectrum with increasing microwave power is caused by an enhanced local microwave field in the transistor due to strong coupling of the microwave field with the microstrip-like structure of the transistor. The field enhancement factor, which was estimated from saturation measurements, can reach 33 in a transistor with a channel width-to-length ratio of 500/10, demonstrating that the thin-film resonator is an effective tool for improving the detection sensitivity.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-01-15
著者
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Stutzmann Martin
Walter Schottky Institut
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Kawachi Genshiro
Hitachi Research Laboratory Hitachi Ltd.
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Brandt Martin
Walter Schottky Institut Technische Universitat Munchen
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Graeff Carlos
Walter Schottky Institut Technische Universitat Munchen
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Brandt Martin
Walter Schottky Institut, Technische Universität München, Am Coulombwall, Garching, 85748, Germany
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Kawachi Genshiro
Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Ohmika, Hitachi, Ibaraki 319-12, Japan
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Stutzmann Martin
Walter Schottky Institut, Technische Universität München, Am Coulombwall, Garching, 85748, Germany
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