Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures
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概要
- 論文の詳細を見る
The radiative recombination of a two-dimensional electron gas (2DEG) was investigated in Al0.30Ga0.70N/GaN single heterostructures (SHs) without intentionally doping the barrier material, i.e., where the 2DEG appears at the interface due only to polarization effects. In addition to the typical excitonic transitions and the LO-phonon replicas originating from the GaN flat-band region, the photoluminescence spectra displayed three well-defined transitions. Their small binding energies and the observed blue shift with the excitation density suggested the association of these new emissions to quasi-2D excitons. On the basis of the thermal and excitation power dependences, the transitions were assigned to interface excitonic lines. Applying a weak electric field parallel to the growth direction, which depletes the triangular well, corroborated the 2DEG nature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Ambacher Oliver
Technische Universitat Ilmenau Zentrum Fur Mikro-und Nanotechnologien
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Stutzmann Martin
Walter Schottky Institut Technische Universitat Munchen
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Stutzmann Martin
Walter Schottky Institut
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Karrer Uwe
Walter Schottky Institut Technische Universitat Munchen
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Martinez-criado Gema
Walter Schottky Institut Technische Universitat Munchen
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Miskys Claudio
Walter Schottky Institut, Technische Universität München, Garching D-85748, Germany
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Miskys Claudio
Walter Schottky Institut Technische Universitat Munchen
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