Uniform and Efficient UV-emitting ZnO/ZnMgO Multiple Quantum Wells Grown by Radical-Source Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• Five-fold stacked ZnO/ZnMgO quantum wells are fabricated by radical-source molecular beam epitaxy on a-plane sapphire, employing low-temperature growth for the ternary component and appropriate annealing steps performed at each interface. Transmission electron microscopy images reveal that the ZnO/ZnMgO interfaces are abrupt and smooth on an atomic scale. Threading dislocations originating from the interfacial region between substrate and the ZnMgO nucleation layer are largely annihilated during growth of a subsequent 600 nm thick ZnMgO buffer. The residual dislocation density in the well region is sufficiently low to allow for efficient exciton emission up to room temperature.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-12-25

著者

• Cui Jian

  Institut Fur Physik Humboldt-universitat Zu Berlin

• Litvinov Dimitri

  Laboratorium Fur Elektronenmikroskopie Universitat Karlsruhe

• Sadofev Sergey

  Institut Fur Physik Humboldt-universitat Zu Berlin

• Blumstengel Sylke

  Institut Fur Physik Humboldt-universitat Zu Berlin

• Henneberger Fritz

  Institut Fur Physik Humboldt-universitat Zu Berlin

• Schneider Reinhard

  Laboratorium Fur Elektronenmikroskopie Universitat Karlsruhe

• Gerthsen Dagmar

  Labor Fur Elektronenmikroskopie Universitat Karlsruhe

• Puls Joachim

  Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin, Germany

• Schneider Reinhard

  Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D-76128 Karlsruhe, Germany

• Cui Jian

  Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin, Germany

• Gerthsen Dagmar

  Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D-76128 Karlsruhe, Germany

• Blumstengel Sylke

  Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin, Germany

• Litvinov Dimitri

  Laboratorium für Elektronenmikroskopie, Universität Karlsruhe, D-76128 Karlsruhe, Germany

• Henneberger Fritz

  Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin, Germany

関連論文

• Quantitative Transmission Electrorn Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3(0001)
• Uniform and Efficient UV-emitting ZnO/ZnMgO Multiple Quantum Wells Grown by Radical-Source Molecular Beam Epitaxy
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• Uniform and Efficient UV-emitting ZnO/ZnMgO Multiple Quantum Wells Grown by Radical-Source Molecular Beam Epitaxy

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