Hirose M | Ntt Electronics Ebina‐shi Jpn
スポンサーリンク
概要
関連著者
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Uchitomi N
Research And Development Center Toshiba Corp.
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Kitaura Y
Research And Development Center Toshiba Corp.
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HIROSE Mayumi
Research and Development Center, Toshiba Corporation
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Hirose M
Ntt Electronics Ebina‐shi Jpn
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Uchitomi Naotaka
Ulsi Laboratories Toshiba Research And Development Center
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KITAURA Yoshiaki
ULSI Laboratories, Toshiba Research and Development Center
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Nishihori K
Toshiba Corp. Kawasaki‐shi Jpn
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Kitaura Yoshiaki
Ulsi Laboratories Toshiba Research And Development Center
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HIROSE Mayumi
ULSI Research Laboratories, TOSHIBA CORPORATION
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亀山 敦
神奈川大学工学部化学教室
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Nishihori Kazuya
Ulsi Research Center Toshiba Corporation
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MIHARA Masakatsu
Research and Development Center, Toshiba Corp.
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Tanabe Y
Tokyo Inst. Of Technol. Yokohama‐shi
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Mihara Masakatsu
Research And Development Center Toshiba Corp.
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Tanabe Y
Hiroshima Univ. Higashihiroshima Jpn
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Tanabe Yoshikazu
Research And Development Center Toshiba Corp.
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KAMEYAMA Atsushi
Research and Development Center, TOSHIBA CORPORATION
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Nagaoka M
Research And Development Center Toshiba Corp.
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NAGAOKA Masami
ULSI Research Laboratories, Toshiba Corporation
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TANABE Yoshikazu
ULSI Research Laboratories, Toshiba Corporation
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MIHARA Masakatsu
ULSI Research Laboratories, Toshiba Corporation
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YOSHIMURA Misao
ULSI Research Laboratories, Toshiba Corporation
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Maeda Tadahiko
Research Institute of Science and Technology for Society, Japan Science and Technology Agency
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吉村 昌弘
東工大・工材研
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Ikeda Y
Mitsubishi Electric Corporation Information Technology R&d Center
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Ikeda Y
Mitsubishi Electric Corp. Kamakura‐shi Jpn
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Maeda Tadahiko
Research And Development Center Toshiba Corporation
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Uchitomi Naotaka
Research And Development Center Toshiba Corporation
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Nishio Johji
Research And Development Center Toshiba Corporation
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Nozaki Chiharu
Research And Development Center Toshiba Corporation
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YOSHIMURA Misao
Research and Development Center, TOSHIBA CORPORATION
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KITAURA Yoshiaki
Research and Development Center, TOSHIBA CORPORATION
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Tanabe Yoshikazu
Research Institutefor Polymers And Textiles
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Yoshimura Misao
Research And Development Center Toshiba Corp.
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NISHIHORI Kazuya
Research and Development Center, Toshiba Corporation
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SASAKI Tadahiro
ULSI Research Laboratories, TOSHIBA CORPORATION
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OTAKA Shoji
Research and Development Center, TOSHIBA CORPORATION
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UMEDA Toshiyuki
Research and Development Center, TOSHIBA CORPORATION
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KAMEYAMA Atsushi
ULSI Research Laboratories, Toshiba Corporation
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IKEDA Yoshiko
ULSI Research Laboratories, Toshiba Corporation
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SAITO Yasuyuki
Microelectronics Center in Tamagawa Works, Toshiba Corporation
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FUKUDA Katsuyoshi
Research and Development Center, Toshiba Corporation
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YASUAMI Sigeru
ULSI Research Center, Toshiba Corporation
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YASHIRO Satao
Semiconductor Division of Horikawa Works, Toshiba Corporation
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WASHIZUKA Shoichi
Semiconductor Division of Horikawa Works, Toshiba Corporation
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WATANABE Masayuki
Semiconductor Division of Horikawa Works, Toshiba Corporation
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Otaka Shoji
Research And Development Center Toshiba Corporation
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Saito Yasuyuki
Micro-electronics Center In Tamagawa Works Toshiba Corporation
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Saito Yasuyuki
Microelectronics Center In Tamagawa Works Toshiba Corporation
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Sasaki Tadahiro
Ulsi Research Laboratories Toshiba Corporation
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Umeda T
Toshiba Corp. Kawasaki‐shi Jpn
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Yasuami Sigeru
Ulsi Research Center Toshiba Corporation
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Kitaura Yoshiaki
Research And Development Center Toshiba Corp.
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Fukuda Katsuyoshi
Research And Development Center Toshiba Corporation
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Washizuka Shoichi
Semiconductor Division Of Horikawa Works Toshiba Corporation
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Watanabe Masayuki
Semiconductor Division Of Horikawa Works Toshiba Corporation
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Nishihori Kazuya
Research And Development Center Toshiba Corporation
著作論文
- A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
- Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
- Buried-Channel WN_x/W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
- Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces