0.8 μm CMOS Process Compatible 60 V-100 mΩ・mm^2 Power MOSFET on Bonded SOI
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Yamaguchi Y
Core Technology Laboratory Mitsui Kinzoku
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Yamaguchi Y
Fuji Xerox Co. Ltd. Kanagawa Jpn
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KAWAGUCHI Yusuke
Materials and Devices Research Laboratories, Toshiba Corporation
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YAMAGUCHI Yoshihiro
Materials and Devices Research Laboratories, Toshiba Corporation
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FUNAKI Hideyuki
Materials and Devices Research Laboratories, Toshiba Corporation
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TERAZAKI Yoshinori
Materials and Devices Research Laboratories, Toshiba Corporation
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NAKAGAWA Akio
Materials and Devices Research Laboratories, Toshiba Corporation
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Kawaguchi Y
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Nakagawa A
Advanced Semiconductor Devices Research Laboratories Toshiba Corporation
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Funaki Hideyuki
Materials And Devices Research Laboratories Toshiba Corporation
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Terazaki Yoshinori
Materials And Devices Research Laboratories Toshiba Corporation
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