Electron Traps in Si p^+nn^+ Diodes Created by 10 MeV Electron Irradiation

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概要

• 論文の詳細を見る

• Two electron traps were observed by deep level transient spectroscopy in 10 MeV electron-irradiated Si p^+nn^+ diodes. The concentrations were nearly equal to each other and were proportional to the radiation flux. The activation energy and electron capture cross section of one trap were 0.13 eV and 2.8×10^<-18>cm^2, respectively. Values for the other trap were 0.39 eV and 3.4×10^<-16>cm^2.

• 社団法人応用物理学会の論文
• 1991-06-15

著者

• Nakagawa A

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• Yahata Akihiro

  Research And Development Center Toshiba Corporation

• NAKAGAWA Akio

  Research and Development Center, Toshiba Corporation

• Nakagawa Akio

  Research And Development Center Toshiba Corporation

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