Numerical Prediction for 2 GHz RF Amplifier of SOI Power MOSFET

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概要

• 論文の詳細を見る

• RF performance of a metal-oxide-semiconductor field effect transistor (MOSFET) on silicon-on-insulator (SOI) with 0.5 μm gate length and 2-μm buried oxide thickness has been numerically predicted using a 2-D device simulator to check its applicability to digital cellular telephones. The device has been found to have excellent performance for a 2 GHz high-power amplifier at a power supply of 2.8 V. The calculated cutoff frequency and maximum frequency of oscillation for the intrinsic MOSFET are 23 GHz and 65 GHz, respectively. The SOI MOSFET is a promising candidate for replacing GaAs MESFETs in 2 GHz RF applications.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Omura Ichiro

  Research And Development Center Toshiba Corporation

• NAKAGAWA Akio

  Research and Development Center, Toshiba Corporation

• Nakagawa Akio

  Research And Development Center Toshiba Corporation

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• Numerical Prediction for 2 GHz RF Amplifier of SOI Power MOSFET

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