Carrier Lifetime Depth Profile for Power Devices with Fast Turn-On Time Investigated by Photoluminescence Decay Method

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概要

• 論文の詳細を見る

• A photoluminescence (PL) decay method has been used for the first time to investigate carrier lifetime depth profiles for a silicon power device with fast turn-on time. Minority carrier lifetimes were found to be 1 to 2 μs for nonirradiated samples and about 60 ns for 5×10^<13> cm^<-2> electron-irradiated samples.

• 社団法人応用物理学会の論文
• 1992-06-15

著者

• Yahata Akihiro

  Research And Development Center Toshiba Corporation

• Yahata A

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• Kuriki Minoru

  Research And Development Center Toshiba Corporation

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• Electron Traps in Si p^+nn^+ Diodes Created by 10 MeV Electron Irradiation
• Carrier Lifetime Depth Profile for Power Devices with Fast Turn-On Time Investigated by Photoluminescence Decay Method

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