Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-07-15
著者
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Inoue T
Tohoku Univ. Sendai Jpn
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Inoue T
Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos
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Inoue Tatsuya
Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect
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Inoue Tetsushi
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Inoue Takahito
Electrotechnical Laboratory
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YAHATA Akihiro
Advanced Discrete Semiconductor Technology Laboratory, Corporated Research and Development Center, T
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URANO Satoshi
Advanced Discrete Semiconductor Technology Laboratory, Corporated Research and Development Center, T
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INOUE Tomoki
Advanced Discrete Semiconductor Technology Laboratory, Corporated Research and Development Center, T
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SHINOHE Takashi
Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation
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Shinohe Takashi
Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos
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Urano Satoshi
Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos
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Inoue T
Applied Laser Engineering Research Institute
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Yahata A
Advanced Semiconductor Devices Research Laboratories Toshiba Corporation
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Inoue Tomoki
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
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Yahata Akihiro
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan
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