Improvement of Channel Mobility for Trench Metal-Oxide-Semiconductor Field Effect Transistor by Smoothing Trench Sidewall Surface

概要

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Channel mobility ($\mu_{\text{eff}}$) for a trench metal-oxide-semiconductor field effect transistor (MOSFET) can be significantly enhanced by smoothing the trench sidewall surface. A smoothed sample showed an increased $\mu_{\text{eff}}$ value, 520 cm2/Vs, at an effective electric field ($E_{\text{eff}}$) of $2.7\times 10^{5}$ V/cm, which was almost equal to that of a planar MOSFET, although it showed slightly smaller values in higher $E_{\text{eff}}$ regions.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2001-01-15