Improvement of Channel Mobility for Trench Metal-Oxide-Semiconductor Field Effect Transistor by Smoothing Trench Sidewall Surface
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概要
- 論文の詳細を見る
- 2001-01-15
著者
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YAHATA Akihiro
Advanced Discrete Semiconductor Technology Laboratory, Corporated Research and Development Center, T
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URANO Satoshi
Advanced Discrete Semiconductor Technology Laboratory, Corporated Research and Development Center, T
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INOUE Tomoki
Advanced Discrete Semiconductor Technology Laboratory, Corporated Research and Development Center, T
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SHINIHE Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporated Research and Development Center, T
関連論文
- Improvement of Channel Mobility for Trench Metal-Oxide-Semiconductor Field Effect Transistor by Smoothing Trench Sidewall Surface
- Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation
- Striations on Si Trench Sidewalls Observed by Atomic Force Microscopy