Confirmation of P-Type Conduction in Li-Doped ZnSe Layers Grown on GaAs Substrates
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概要
- 論文の詳細を見る
Hall effect measurements were carried out for Li-doped MOCVD ZnSe layers whose GaAs substrates were removed. This made it possible to obtain the original p-type properties for the layers. Hole concentration, Hall mobility and specific resistivity were 4.1×10^<16>cm^<-3>, 24cm^2/V・s and 6.4 Ω・cm, respectively. Furthermore, the characteristics for the GaAs inversion layers, which were changed from semi-insulating to p-type by Zn diffusion from the ZnSe layers, were estimated by comparing the results of samples without GaAs substrates with those with GaAs substrates.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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YAHATA Akihiro
Research and Development Center, Toshiba Corporation
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Beppu T
Research And Development Center Toshiba Corporation
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Yahata A
Research And Development Center Toshiba Corporation
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Yahata Akihiro
Research And Development Center Toshiba Corporation
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Mitsuhashi Hiroshi
Research And Development Center Toshiba Corporation
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HIRAHARA Keijiro
Research and Development Center, Toshiba Corporation
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BEPPU Tatsuro
Research and Development Center, Toshiba Corporation
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Hirahara K
Research And Development Center Toshiba Corporation
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Hirahara Keijiro
Research And Development Center Toshiba Corporation
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