Hign-Power Long-Cavity T^3 Laser with a Very Narrow Beam

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概要

• 論文の詳細を見る

• A 790 nm AlGaAs laser with a thin tapered thickness active layer (T^3 laser), whose cavity length is 350 μm, has been developed. As the beam divergence of the laser becomes narrower, the threshold current does not increase. Both the current density and the thermal resistance can be reduced by extending the cavity length of the laser. The laser emitted a light output power over 100 mW even at 80℃ and proved to have a fundamental transverse mode at least up to 120 mW. The stable 50 mW operation at 50℃ over 2000 hours has been confirmed.

• 社団法人応用物理学会の論文
• 1989-01-20

著者

• Shima Akihiro

  Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation

• KUMABE Hisao

  Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation

• Matsubara H

  Japan Fine Ceramics Center Nagoya Jpn

• Kumabe Hisao

  Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation

• Susaki Wataru

  Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation

• YAMAWAKI Takeshi

  Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation

• SAITO Hiroyuki

  Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation

• MATSUBARA Hiroshi

  Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation

• Shima Akihiro

  Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation

• Yamawaki Takeshi

  Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation

• Saito Hiroyuki

  Optoelectronic And Microwave Devices R & D Laboratory Mitsubishi Electric Corporation

• Matsubara Hiroshi

  Japan Fine Ceramics Center

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