Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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KIMURA Tatsuya
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation
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Sonoda Takuji
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Sonoda Takuji
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Sonoda Takuji
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Sonoda Takuji
Optoelectronic & Microwave Devices Lab. Mitsubishi Electric Corporation
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Mitsui S
Super-fine Sr Lithography Lab. Association Of Super-advanced Electronics Technologies (aset) Co Ntt
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Mitsui Shigeru
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Mitsui Shigeru
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Kimura Tatsuya
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Takamiya S
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Ishida Takao
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Mihashi Yutaka
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Takamiya Saburo
Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation
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Mihashi Yutaka
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Takamiya Saburo
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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Ishida Takao
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
関連論文
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- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
- High-Efficiency and Highly Reliable 20 W GaAs Power Field-Effect Transistor in C Band
- Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System
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- Time-Resolved Photoluminescence Study on a Hetero Interface Formed by Direct Regrowth of GaAs on an Al_Ga_As Surface Prepared by an In Situ HCl Gas Etching Process
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