Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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Sonoda Takuji
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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Mitsui S
Super-fine Sr Lithography Lab. Association Of Super-advanced Electronics Technologies (aset) Co Ntt
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Takamiya S
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
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SONODA Takuji
Kitaitami Works, Mitsubishi Electric Corp.
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ITO Michihiro
Kitaitami Works, Mitsubishi Electric Corp.
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SEGAWA Kazuaki
Kitaitami Works, Mitsubishi Electric Corp.
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TAKAMIYA Saburo
Kitaitami Works, Mitsubishi Electric Corp.
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MITSUI Shigeru
Kitaitami Works, Mitsubishi Electric Corp.
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Ito Michihiro
Kitaitami Works Mitsubishi Electric Corp.
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Segawa Kazuaki
Kitaitami Works Mitsubishi Electric Corp.
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- Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System
- Mask Distortion Analysis for the Fabrication of 1 GBit Dynamic Random Access Memories by X-Ray Lithography
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