High-Efficiency and Highly Reliable 20 W GaAs Power Field-Effect Transistor in C Band
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-08-15
著者
-
Sonoda Takuji
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
-
Kasai Nobuyuki
Kita-itami Works Mitsubishi Electric Corporation
-
Takamiya S
Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation
-
SONODA Takuji
Kita-itami Works, Mitsubishi Electric Corporation
-
SAKAMOTO Shinichi
Kita-itami Works, Mitsubishi Electric Corporation
-
YAMANOUCHI Masahide
Kita-itami Works, Mitsubishi Electric Corporation
-
TAKAMIYA Saburo
Kita-itami Works, Mitsubishi Electric Corporation
-
KASHIMOTO Yuzou
Kita-itami Works, Mitsubishi Electric Corporation
-
Sakamoto S
Yamanashi Univ. Kofu Jpn
-
Takamiya Saburo
Kita-itami Works Mitsubishi Electric Corporation
-
Sonoda Takuji
Kita-itami Works Mitsubishi Electric Corporation
-
Kashimoto Yuzou
Kita-itami Works Mitsubishi Electric Corporation
-
Yamanouchi Masahide
Kita-itami Works Mitsubishi Electric Corporation
関連論文
- Refractive Index Ellipsoids of a Polyformal Magneto-Optical Memory Disk Substrate
- Optical Anisotropies in Modified Polycarbonates
- Stress-Optical Coefficients in Polycarbonates
- Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
- High-Efficiency and Highly Reliable 20 W GaAs Power Field-Effect Transistor in C Band
- Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System
- A Cylindrical Multi-Layer Drift Chamber for a Low-Energy pp Experiment