Simulation of Collector Current Distribution in Heterojunction Bipolar Transistors Using Newly Proposed Empirical Expression
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-02-01
著者
-
Sonoda Takuji
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation
-
Sonoda Takuji
Optoelectronic & Microwave Devices Lab. Mitsubishi Electric Corporation
-
Shimura T
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
Kato Manabu
Av & Network Development Center Pioneer Corporation
-
SHIMURA Teruyuki
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
-
SAKAI Masayuki
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
-
KATO Manabu
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
-
IZUMI Sigekazu
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
-
HATTORI Ryo
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
-
TAKAMIYA Saburou
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
-
Hattori R
Univ. Michigan Mi Usa
-
Izumi Sigekazu
Optoelectronic & Microwave Devices Lab. Mitsubishi Electric Corporation
-
Takamiya Saburou
Optoelectronic & Microwave Devices Lab. Mitsubishi Electric Corporation
-
Sakai Masayuki
Optoelectronic & Microwave Devices Lab. Mitsubishi Electric Corporation
関連論文
- A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
- Physical Characteristics and Format of Digital Versatile Disc Re-Recordable
- Physical Characteristics and the Format of Digital Versatile Disc-Recordable
- The New Re-writable Disc system for Digital Versatile Disc
- Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
- Simulation of Collector Current Distribution in Heterojunction Bipolar Transistors Using Newly Proposed Empirical Expression
- High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones (Special Issue on Microwave and Millimeterwave High-power Devices)
- Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy
- Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/InGaAs High Electron Mobility Transistors
- Simulation of Collector Current Distribution in Heterojunction Bipolar Transistors Using Newly Proposed Empirical Expression