Sonoda Takuji | Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation

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著作論文

A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
Simulation of Collector Current Distribution in Heterojunction Bipolar Transistors Using Newly Proposed Empirical Expression
Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/InGaAs High Electron Mobility Transistors

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