Simulation of Collector Current Distribution in Heterojunction Bipolar Transistors Using Newly Proposed Empirical Expression
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概要
- 論文の詳細を見る
This paper proposes a new empirical expression of the collector current in multifinger HBTs (Heterojunction Bipolar Transistors) as a function of the junction temperature, which is essential for optimizing the device layout and the ballasting resistor. The novel calculation yields more precise agreement with measured data than the conventional one. This scheme should be useful for elucidating the actual collector current distribution over each finger in multifinger HBTs.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-15
著者
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Sonoda Takuji
Optoelectronic & Microwave Devices Lab. Mitsubishi Electric Corporation
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SHIMURA Teruyuki
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
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SAKAI Masayuki
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
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KATO Manabu
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
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IZUMI Sigekazu
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
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HATTORI Ryo
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
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TAKAMIYA Saburou
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation
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Hattori Ryo
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664, Japan
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Izumi Sigekazu
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664, Japan
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Shimura Teruyuki
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664, Japan
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Takamiya Saburou
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664, Japan
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