Light Trapping for Thin-Film Silicon Solar Cells Fabricated on Insulator

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概要

• 論文の詳細を見る

• We have developed a new solar cell using thin-film silicon supported by a silicon substrate etched in a grid form. The light-trapping structures of this cell have been studied by considering rear surface light reflections, electrical power loss and mechanical strength. High rear reflectance can be obtained by employing a multi-layer rear electrode. The pattern of the rear substrate is designed to provide sufficient mechanical strength and to minimize the electrical power loss, taking account of the current flow path. A conversion efficiency of 14.2% for a practical size of 10×10 cm^2 is obtained by applying these calculated parameters using a single-crystal silicon substrate.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• Kumabe Hisao

  Semiconductor Laboratory Mitsubishi Electric Corporation

• Kumabe Hisao

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Mitsui Shigeru

  Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation

• Murotani Toshio

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Murotani Toshio

  Semiconductor Laboratory Mitsubishi Electric Corporation

• Deguchi Mikio

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• SASAKI Hajime

  Optoelectronic & Microwave Devices Laboratory, Mitsubishi Electric Corporation

• MORIKAWA Hiroaki

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• MATSUNO Yoshinori

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• ISHIHARA Takashi

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• Morikawa Hiroaki

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Matsuno Yoshinori

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Sasaki Hajime

  Optoelectronic & Microwave Devices Laboratory Mitsubishi Electric Corporation

• Ishihara Takashi

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

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• Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/InGaAs High Electron Mobility Transistors
• Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
• Light Trapping for Thin-Film Silicon Solar Cells Fabricated on Insulator

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