Refractive Index of In_<0.84>Ga_<0.16>As_<0.46>P_<0.54> at Its Laser Oscillating Wavelength of 1.2 μm

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-04-05

著者

• Ishii Makoto

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• ISHII Makoto

  Semiconductor Laboratory, Mitsubishi Electric Corporation

• Susaki Wataru

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Susaki Wataru

  Semiconductor Laboratory Mitsubishi Electric Corporation

• Murotani Toshio

  Semiconductor Laboratory Mitsubishi Electric Corporation

• Oomura Etsuji

  Semiconductor Laboratory Mitsubishi Electric Corporation

• Ishii Makoto

  Semiconductor Laboratory Mitsubishi Electric Corporation

関連論文

• Electron Microscopic Observation of Oxide Crystals Grown on Thin Film of α-Brass at Elevated Temperature
• Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
• High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
• Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
• Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
• Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
• Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
• Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
• Light Trapping for Thin-Film Silicon Solar Cells Fabricated on Insulator
• A Dual-Stripe Phase-Locked Diode Laser
• Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
• A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY

もっと見る 閉じる

スポンサーリンク