A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Takamiya Saburo

  Semiconductor Laboratory Mitsubishi Electric Corporation

• ISHII Makoto

  Semiconductor Laboratory, Mitsubishi Electric Corporation

• Susaki Wataru

  Semiconductor Laboratory Mitsubishi Electric Corporation

• TANAKA Toshio

  Semiconductor Laboratory, Mitsubishi Electric Corporation

• Ishii Makoto

  Semiconductor Laboratory Mitsubishi Electric Corporation

• Tanaka Toshio

  Semiconductor Laboratory Mitsubishi Electric Corporation

• SUSAKI Wataru

  Semiconductor Laboratory, Mitsubishi Electric Corporation

関連論文

• Electron Microscopic Observation of Oxide Crystals Grown on Thin Film of α-Brass at Elevated Temperature
• Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
• High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
• Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
• Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
• Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
• A Dual-Stripe Phase-Locked Diode Laser
• Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
• A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY

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