Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution

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概要

• 論文の詳細を見る

• Undoped, and Ge- and Te-doped Al_xGa_<1-x>As(x≒0.4) layers are epitaxially grown from Ga solutions which are pre-heated at 800℃ for various lengths of time in a purified hydrogen gas flow. It is found that a net carrier concentration in an undoped layer decreases and the lower energy emission intensity in a photoluminescence measurement is also reduced by heating Ga solutions. In Ge- or Te-doped Al_xGa_<1-x>As(x≒0.4)layers, broad bands in the lower energy part of the photoluminescence spectra decrease with increasing period of pre-heating the Ga solutions prior to the growth. It seems that the broad bands observed result from the formation of the corresponding deep levels due to the complexes associated with the incorporated dopant and oxygen.

• 社団法人応用物理学会の論文
• 1978-03-05

著者

• Ito Akiko

  Semiconductor Laboratory Mitsubishi Electric Corporation:(present Address) Soft Science Group Resear

• ISHII Makoto

  Semiconductor Laboratory, Mitsubishi Electric Corporation

• Ishii Makoto

  Semiconductor Laboratory Mitsubishi Electric Corporation

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