Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
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概要
- 論文の詳細を見る
- 1978-05-05
著者
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Ishii Makoto
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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ISHII Makoto
Semiconductor Laboratory, Mitsubishi Electric Corporation
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Susaki Wataru
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Semiconductor Laboratory Mitsubishi Electric Corporation
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Oomura Etsuji
Semiconductor Laboratory Mitsubishi Electric Corporation
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IKEDA Kenji
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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IKEDA Kenji
Semiconductor Research and Development Division, Mitsubishi Electric Corporation
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Ikeda Kenji
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Ishii Makoto
Semiconductor Laboratory Mitsubishi Electric Corporation
関連論文
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- Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
- High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
- Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
- Photoluminescence Study of Epitaxial AlGaAs Layer Grown from Pre-Heated Ga Solution
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- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
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- Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
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