Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen

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概要

• 論文の詳細を見る

• The arsenic partial pressure required to suppress the thermal decomposition of GaAs surfaces was determined experimentally by introducing AsH_3 into the reactor tube. The required partial pressure agreed well with the equilibrium pressure of As_2 over the Ga-As loquidus. Although thermal conversion of the surface region was not prevented by the same pressure, a remarkable decay was observed in the intensity of the associated photoluminescence peak at 1.41 eV.

• 社団法人応用物理学会の論文
• 1982-01-05

著者

• Ohsawa Jun

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Susaki Wataru

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Susaki Wataru

  Semiconductor Laboratory Mitsubishi Electric Corporation

• Susaki Wataru

  Lsi Research & Development Laboratory

• IKEDA Kenji

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• TAKAHASHI Kazuhisa

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• Ikeda Kenji

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Takahashi Kazuhisa

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

関連論文

• Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
• High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
• Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
• Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
• Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
• Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
• A Dual-Stripe Phase-Locked Diode Laser
• Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
• A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY

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