Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Higuchi Hideyo
Lsi Research & Development Laboratory
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Susaki Wataru
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Lsi Research & Development Laboratory
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OOMURA Etsuji
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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HIRANO Ryoichi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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SAKAKIBARA Yasushi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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NAMIZAKI Hirohumi
LSI Research & Development Laboratory
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Namizaki Hirohumi
Lsi Research & Development Laboratory
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Hirano Ryoichi
Lsi Research & Development Laboratory
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Oomura Etsuji
Lsi Research & Development Laboratory
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Sakakibara Yasushi
Lsi Research & Development Laboratory
関連論文
- Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
- Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
- Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
- Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
- A Dual-Stripe Phase-Locked Diode Laser
- Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen