A Dual-Stripe Phase-Locked Diode Laser
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概要
- 論文の詳細を見る
An AlGaAs dual-stripe laser, where each stripe has an SBH configuration, has been fabricated by means of chemical etching followed by liquid phase epitaxy. Phase-locked oscillation is observed under pulsed and CW operations. This is confirmed by the coalescence of the two longitudinal modes, as well as by the interference fringe measured in the far-field radiation pattern.
- 社団法人応用物理学会の論文
- 1983-04-20
著者
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Ohsawa Jun
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Semiconductor Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Lsi Research & Development Laboratory
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IKEDA Kenji
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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TAKAHASHI Kazuhisa
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Ikeda Kenji
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Takahashi Kazuhisa
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
関連論文
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- Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
- A Dual-Stripe Phase-Locked Diode Laser
- Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
- A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY