Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
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概要
- 論文の詳細を見る
- 1980-10-05
著者
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Ishii Makoto
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Ohsawa Jun
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Semiconductor Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Lsi Research & Development Laboratory
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Hirano Ryoichi
Lsi Research & Development Laboratory
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Hirano Ryoichi
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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IKEDA Kenji
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Ikeda Kenji
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
関連論文
- Mirror Coating of AlGaAs TJS Lasers by an Si/SiO_2 Reflector
- High Temperature Single Mode CW Operation with a TJS Laser Using a Semi-Insulating GaAs Substrate : B-5: LASERS (2)
- Gain Spectra in Single Mode Oscillating (AlGa)As TJS Lasers
- Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
- Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1
- Refractive Index of In_Ga_As_P_ at Its Laser Oscillating Wavelength of 1.2 μm
- A Dual-Stripe Phase-Locked Diode Laser
- Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen
- A New Heat Treatment Technique for No Thermal Conversion of Semi-Insulating GaAs Wafers : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY