SAKAKIBARA Yasushi | LSI Research and Development Laboratory, Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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Higuchi Hideyo
Lsi Research & Development Laboratory
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Susaki Wataru
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Susaki Wataru
Lsi Research & Development Laboratory
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OOMURA Etsuji
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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HIRANO Ryoichi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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SAKAKIBARA Yasushi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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Namizaki Hirohumi
Lsi Research & Development Laboratory
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Hirano Ryoichi
Lsi Research & Development Laboratory
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Oomura Etsuji
Lsi Research & Development Laboratory
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Sakakibara Yasushi
Lsi Research & Development Laboratory
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NAMIZAKI Hirofumi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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FUJIKAWA Kyoichiro
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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NAMIZAKI Hirohumi
LSI Research & Development Laboratory
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Fujikawa Kyoichiro
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
著作論文
- Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
- Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers : B-2: LD AND LED-1