A 1.9GHz Single-Chip RF Front-End GaAs MMIC with Low-Distortion Cascode FET Mixer (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)

概要

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We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The IC employs a negative voltage generator for use of single voltage DC power supply, The HPA provides an output power of 21.5 dBm, with an ACPR of -55 dBc and an efficiency of 35%. The LNA has a noise figure of 1.6 dB and a gain of 14 dB with current of 2.3 mA. The newly developed active cascode FET mixer has a high IIP3 of -1 dBm with a high conversion gain of 10 dB and low consumption current of 2.3 mA. The IC is characterized by high performance for RF front-end of PHS handheld terminals. The IC is available in a 7.0 mm×6.4 min× 1.1 mm plastic package.
社団法人電子情報通信学会の論文
1999-05-25