Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit(Special Issue on Silicon RF Device & Integrated Circuit Technologies)

概要

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An L-band low quiescent current and low distortion SiGe heterojunction bipolar transistor (HBT) driver amplifier having a self base bias control circuit is described. Since the size of this bias circuit is small and it does not need an external control circuit, it is easy to be integrated with the driver amplifier on a single chip. According to the output power level, the self base bias control circuit, which is the combination of a constant base voltage circuit and p-metal oxide semiconductor (MOS) FET current mirror with a constant current source, automatically controls the base voltage, and allows low quiescent current at low output power level and low distortion at high output power level. The simulated results show that the driver amplifier having the self base bias control circuit achieves 1 dB power compression point(P_<1dB>) improvement of 2.4dB compared with the driver amplifier having a conventional constant base voltage under the same quiescent current condition. The fabricated driver amplifier with the proposed bias circuit shows high P_<1dB> of 15.0 dBm with low quiescent current of 15.3 mA.
社団法人電子情報通信学会の論文
2002-07-01