A Calculation Method of Large-Signal Characteristics of Multi-Stage Power Amplifier Modules Using Source-Pull and Load-Pull Data(Special Issue on Microwave and Millimeter-Wave Module Technology)
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概要
- 論文の詳細を見る
This paper describes a calculation method of large-signal characteristics of multi-stage power amplifier modules using source-pull and load-pull data. An output power, a power-added efficiency, and a phase deviation of multi-stage power amplifier modules are calculated based on the source-pull and load-pull data, which are comprised of input and output reflection coefficients, an input power, an output power, a phase deviation and a drain voltage and current, taking into account the source and load impedance of each stage FET. Applying this method to a 900MHz two-stage Si-MOSFET power amplifier module, the calculated and measured results are in good agreement.
- 社団法人電子情報通信学会の論文
- 1998-06-25
著者
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Mori K
Information Technology R&d Center Mitsubishi Electric Corporation
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Takagi T
Optical Interconnection Sumiden Laboratory Rwcp
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Mori Kazutomi
Information Technology R&d Center Mitsubishi Electric Corporation
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Mori Kensaku
Faculty of Engineering, Nagoya University Graduate School
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Takagi T
Research Institute Of Electrical Communication Tohoku University
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Takagi T
It-21 Center Research Institute Of Electrical Communications Tohoku University
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MORI Kazutomi
Mitsubishi Electric Corporation, Information Technology R&D Center
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ITOH Yasushi
Mitsubishi Electric Corporation, Information Technology R&D Center
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TAKAGI Tadashi
Mitsubishi Electric Corporation, Information Technology R&D Center
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KOMURO Katsuya
Mitsubishi Electric Corporation, Semiconductor Group, High Frequency & Optical Semiconductor Divisio
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Takagi Tadashi
Mitsubishi Electric Corporation
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Itoh Y
Shonan Inst. Of Technol. Fujisawa‐shi Jpn
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Komuro Katsuya
Mitsubishi Electric Corporation Semiconductor Group High Frequency & Optical Semiconductor Divis
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Itoh Yasushi
Mitsubishi Electric Corporation Information Technology R&d Center
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Itoh Yasushi
Mitsubishi Electric Corporation Information Technology R & D Center
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