Si Substrate Resistivity Design for On-Chip Matching Circuit Based on Electro-Magnetic Simulation

概要

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For on-chip matching Si-MMIC fabricated on a conventional low resistivity Si substrate, the loss of on-chip inductors is quite high due to the dielectric loss of the substrate. In order to reduce the loss of on-chip matching circuit, the use of high resistivity Si substrate is quite effective. By using electromagnetic simulation, the relationship between coplanar wave-guide (CPW) transmission line characteristics and the resistivity of Si substrate is discussed. Based on the simulated results, the resistivity of Si substrate is designed to achieve lower dielectric loss than conductor loss. The effectiveness of high resistivity Si substrate is evaluated by the extraction of equivalent circuit model parameters of the fabricated on-chip spiral inductors and the measurement of the fabricated on-chip matching Si-MMIC LNA's.
社団法人電子情報通信学会の論文
2001-07-01