MORI Kazutomi | Information Technology R&D Center, Mitsubishi Electric Corporation

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著作論文

Analog Pre-Distortion Linearizer Using Self Base Bias Controlled Amplifier
A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT (Special Issue on High-Frequency/speed Devices in the 21st Century)
A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals(Special Issue on Microwave and Millimeter Wave Technology)
Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit(Special Issue on Silicon RF Device & Integrated Circuit Technologies)
An L-Band High Efficiency and Low Distortion Multi-Stage Amplifier Using Self Phase Distortion Compensation Technique(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
A Large-Signal Simulation Program for Multi-Stage Power Amplifier Modules by Using a Novel Interpolation
A Distortion Analysis Method for FET Amplifiers Using Novel Frequency-Dependent Complex Power Series Model (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance (Special Issue on Microwave and Millimeterwave High-power Devices)
High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones (Special Issue on Microwave and Millimeterwave High-power Devices)
Analog Pre-Distortion Linearizer Using Self Base Bias Controlled Amplifier

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