A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications (Special Issue on High-Frequency/speed Devices in the 21st Century)
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概要
- 論文の詳細を見る
A 100W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 μm to shrink the chip size. The size of the chip and the package are miniaturized to 1.24×2.6mm^2 and 17.4×24.0 mm^2, respectively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-order intermodulation distortion and the power-added efficiency under the two-tone test condition (？f = 1 MHz) are -35 dBc and 24%, respectively at 42 dBm output power, that is 8 dB back off from the saturation power.
- 社団法人電子情報通信学会の論文
- 1999-11-25
著者
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Yoshida Naohito
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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Sato Kazunao
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Sato Kazunao
High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation
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GOTO Seiki
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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FUJII Kenichi
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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KUNII Tetsuo
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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SUZUKI Satoshi
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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KAWATA Hiroshi
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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MIYAKUNI Shinichi
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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SAKAMOTO Susumu
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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FUJIOKA Takashi
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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TANINO Noriyuki
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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Kunii Tetsuo
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Suzuki Satoshi
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Tanino Noriyuki
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Fujioka Takashi
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Sakamoto S
Gunma Univ. Kiryn‐shi Jpn
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Yoshida Naohito
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Goto Seiki
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Miyakuni Shinichi
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Fujii Kenichi
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Kawata Hiroshi
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
関連論文
- Simultaneous achievement of high performance and high reliability in a 38/77GHz InGaAs/AlGaAs PHEMT MMIC
- A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers(Special Issue on Microwave and Millimeter Wave Technology)
- High-Efficiency 0.1 cc Power Amplifier Module for 900 MHz Personal Digital Cellular Telephones (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Polarization Insensitive Electroabsorption Modulators for High-Speed Optical Gating (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module(Microwaves, Millimeter-Waves)
- Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation