Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
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概要
- 論文の詳細を見る
A wavelength tunable DBR laser monolithically integrated with an EA-modulator as a WDM system light source was fabricated by selective area MOVPE growth. The lasing wavelength and band-gap energy were simultaneously controlled on the same epitaxial wafer by using a modulated grown thickness of InGaAsP/InGaAsP MQW layers. A wavelength tuning range of gt3.5nm, an output power of gt3mW, and an extinction ratio of gt14dB for 3V were achieved. The measured 3dB frequency bandwidth was 2GHz. No significant change in modulation characteristics were observed when wavelength tuning by injecting the current into the DBR.
- 社団法人電子情報通信学会の論文
- 1997-01-25
著者
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KATOH Yukio
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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YAMADA Koji
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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KUNII Tatsuo
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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OGAWA Yoh
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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Ogawa Y
Riken Wako‐shi Jpn
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Ogawa Yoh
Semiconductor Technology Laboratory R&d Group Oki Electric Industry Co. Ltd.
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Kunii Tetsuo
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
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Yamada K
Microsystem Integration Laboratories Ntt Corporation
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Katoh Yukio
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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